AS7C256 View Datasheet(PDF) - Alliance Semiconductor

Part Name

Description

Manufacturer

AS7C256

High Performance 32K×8 CMOS SRAM

Alliance Semiconductor 

AS7C256

AS7C256L

RECOMMENDED OPERATING CONDITIONS

Parameter

Supply Voltage

Input Voltage

*VIL min = –3.0V for pulse width less than tRC/2.

Symbol

Min

Typ

VCC

4.5

5.0

GND

0.0

0.0

VIH

2.2

–

VIL

–0.5*

–

(Ta = 0°C to +70°C)

Max

Unit

5.5

V

0.0

V

VCC+1

V

0.8

V

DC OPERATING CHARACTERISTICS1

(VCC = 5V±10%, GND = 0V, Ta = 0°C to +70°C)

Parameter

Symbol Test Conditions

Input Leakage

Current

|ILI|

Output Leakage

Current

|ILO|

Operating Power

Supply Current

ICC

VCC = Max,

Vin = GND to VCC

CE = VIH, VCC = Max,

Vout = GND to VCC

CE = VIL, f = fmax,

Iout = 0 mA

Standby

ISB

Power Supply

Current

ISB1

Output Voltage VOL

VOH

CE = VIH, f = fmax

CE > VCC–0.2V, f = 0,

Vin ≤ 0.2V or

Vin ≥ VCC–0.2V

IOL = 8 mA, VCC = Min

IOH = –4 mA, VCC = Min

-10

-12

-15

-20

-25

-35

Min Max Min Max Min Max Min Max Min Max Min Max Unit

– 1 – 1 – 1 – 1 – 1 – 1 µA

– 1 – 1 – 1 – 1 – 1 – 1 µA

– 120 – 115 – 110 – 100 – 90 – 80 mA

L – 115 – 110 – 105 – 95 – 85 – 75 mA

– 45 – 40 – 30 – 30 – 25 – 25 mA

L – 40 – 35 – 25 – 25 – 20 – 20 mA

– 2.0 – 2.0 – 2.0 – 2.0 – 2.0 – 2.0 mA

L – 0.5 – 0.5 – 0.5 – 0.5 – 0.5 – 0.5 mA

– 0.4 – 0.4 – 0.4 – 0.4 – 0.4 – 0.4 V

2.4 – 2.4 – 2.4 – 2.4 – 2.4 – 2.4 – V

CAPACITANCE2

Parameter

Input Capacitance

I/O Capacitance

Symbol

CIN

CI/O

(f = 1 MHz, Ta = Room Temperature, VCC = 5V)

Signals

Test Conditions

Max

Unit

A, CE, WE, OE

Vin = 0V

5

pF

I/O

Vin = Vout = 0V

7

pF

3

Share Link: