ALD1103SBL View Datasheet(PDF) - Advanced Linear Devices

Part Name

Description

Manufacturer

ALD1103SBL

DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR

Advanced Linear Devices 

TYPICAL N-CHANNEL PERFORMANCE CHARACTERISTICS

OUTPUT CHARACTERISTICS

160

VBS = 0V

TA = 25°C

120

80

VGS = 12V

10V

8V

6V

40

0

0

4V

2V

2

4

6

8

10

12

DRAIN-SOURCE VOLTAGE (V)

LOW VOLTAGE OUTPUT

CHARACTERISTICS

8

VBS = 0V

TA = 25°C

VGS = 12V

4

6V

4V

2V

0

-4

-8

-160

-80

0

80

160

DRAIN -SOURCE VOLTAGE (mV)

1 x105

5 x104

2 x104

1 x104

5 x103

FORWARD TRANSCONDUCTANCE

vs. DRAIN-SOURCE VOLTAGE

VBS = 0V

f = 1KHz

TA = +125°C

TA = +25°C

IDS = 10mA

2 x103

1 x103

0

IDS = 1mA

2

4

6

8

10

12

DRAIN -SOURCE VOLTAGE (V)

TRANSFER CHARACTERISTIC

WITH SUBSTRATE BIAS

20

VGS = VDS

TA = 25°C

15

VBS = 0V -2V -4V

10

-6V

-8V

-10V

5

-12V

0

0

0.8

1.6

2.4

3.2

4.0

GATE - SOURCE VOLTAGE (V)

RDS (ON) vs. GATE - SOURCE VOLTAGE

10000

1000

VDS = 0.2V

VBS = 0V

TA = +125°C

100

TA = +25°C

10

0

2

4

6

8

10

12

GATE SOURCE VOLTAGE (V)

10X10-6

OFF DRAIN - CURRENT vs.

TEMPERATURE

VDS = +12V

VGS = VBS = 0V

10X10-9

10X10-12

-50 -25

0 +25 +50 +75 +100 +125

TEMPERATURE (°C)

ALD1103

Advanced Linear Devices

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