AO4442(2011) View Datasheet(PDF) - Alpha and Omega Semiconductor
Part Name
Description
Manufacturer
AO4442 Datasheet PDF : 5 Pages
| |||
AO4442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
75
V
IDSS
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
TJ=55°C
1
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1
2.4
3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.1A
TJ=125°C
100 130
mΩ
180 220
VGS=4.5V, ID=2A
120 165 mΩ
gFS
Forward Transconductance
VDS=5V, ID=3.1A
8.2
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.79 1
V
IS
Maximum Body-Diode Continuous Current
3.5
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=37.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
303 350 pF
37
pF
17
pF
2.2
3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.2 6.5 nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=37.5V, ID=3.1A
2.46 3.5 nC
1
nC
Qgd
Gate Drain Charge
1.34
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
VGS=10V, VDS=37.5V, RL=12Ω,
2.3
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
15.6
ns
tf
Turn-Off Fall Time
1.9
ns
trr
Body Diode Reverse Recovery Time IF=3.1A, dI/dt=100A/µs
22
30
ns
Qrr
Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs
22
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: June 2011
www.aosmd.com
Page 2 of 5
Share Link: 