AO4932
Asymmetric Dual N-Channel MOSFET
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
10V
30
4.5V
3V
25
2.75V
20
15
2.5V
10
5
VGS=2.25V
0
0
1
2
3
4
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
35
VDS=5V
30
25
20
125°C
15
10
25°C
5
0
1.5
1.8
2.1
2.4
2.7
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
14
VGS=4.5V
12
10
VGS=10V
8
1.8
1.6
VGS=10V
ID=11A
1.4
17
VGS=4.5V5
1.2
ID=9A 2
10
1
6
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistan(cNeotves.EJ) unction18Temperature
25
ID=11A
20
125°C
15
10
25°C
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
25°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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