AOD412L View Datasheet(PDF) - Alpha and Omega Semiconductor
Part Name
Description
Manufacturer
AOD412L Datasheet PDF : 5 Pages
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AOD412
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD412 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOD412 is Pb-free (meets ROHS
& Sony 259 specifications). AOD412L is a Green
Product ordering option. AOD412 and AOD412L are
electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 7.0mΩ (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 4.5V)
TO-252
D-PAK
Top View
Drain Connected
to Tab
GD S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B,G
TC=100°C B
ID
Pulsed Drain Current
IDM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.1mH C
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
85
65
200
30
120
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
14.2
39
20
50
Maximum Junction-to-Lead C
Steady-State
RθJL
0.8
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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