AOD464L View Datasheet(PDF) - Alpha and Omega Semiconductor
Part Name
Description
Manufacturer
AOD464L Datasheet PDF : 5 Pages
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AOD464
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
105
V
IDSS
Zero Gate Voltage Drain Current
VDS=84V, VGS=0V
TJ=55°C
1
µA
5
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±25V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
100 nA
2.5 3.2
4
V
80
A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=10V, ID=20A
VGS=6V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
21.5 28
mΩ
32
40
24
31 mΩ
50
S
0.73 1
V
55
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
2038 2445 pF
204
pF
Crss
Reverse Transfer Capacitance
85
pF
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.3 1.56 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
38.5 46 nC
8
nC
Qgd
Gate Drain Charge
10
nC
tD(on)
Turn-On DelayTime
12.7
ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=2.7Ω,
8.2
ns
RGEN=3Ω
31.5
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
11.2
ns
59.6 74
ns
161
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July2005
Alpha & Omega Semiconductor, Ltd.
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