APM7318 View Datasheet(PDF) - Anpec Electronics
Part Name
Description
Manufacturer
APM7318 Datasheet PDF : 9 Pages
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APM7318
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM
PD
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Maximum Power Dissipation TA=25°C
TA=100°C
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
RθjA
Thermal Resistance – Junction to Ambient
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Rating
20
±16
8
24
2.5
1.0
150
-55 to 150
50
Unit
V
A
W
W
°C
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=250µA
IDSS
Zero Gate Voltage Drain
Current
VDS=18V , VGS=0V
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
Ra
DS(ON)
Drain-Source On-state
Resistance
VSDa Diode Forward Voltage
Dynamicb
VDS=VGS , IDS=250µA
VGS=±16V , VDS=0V
VGS=4.5V , IDS=8A
VGS=2.5V , IDS=2A
ISD=4A , VGS=0V
Qg Total Gate Charge
VDS=10V , IDS= 6A
Qgs Gate-Source Charge
VGS=4.5V
Qgd Gate-Drain Charge
td(ON)
Tr
Turn-on Delay Time
Turn-on Rise Time
VDD=10V , IDS=2A ,
td(OFF) Turn-off Delay Time
VGEN=4.5V , RG=0.2Ω
Tf Turn-off Fall Time
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=15V
Crss Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
APM7318
Min. Typ. Max.
Unit
20
V
1
µA
0.7 0.9 1.5
V
±100 nA
15
30
20
40
mΩ
0.7 1.3
V
14
17
5
nC
2.8
9
15
14
20
30
43
ns
16
24
1220
335
pF
215
Copyright ANPEC Electronics Corp.
2
Rev. A.3 - May., 2003
www.anpec.com.tw
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