BAS416 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BAS416 Datasheet PDF : 8 Pages
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NXP Semiconductors
Low-leakage diode
Product data sheet
BAS416
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
• Low-leakage current applications in surface mounted
circuits.
DESCRIPTION
Epitaxial, medium-speed switching diode with a low
leakage current encapsulated in a small SOD323 SMD
plastic package.
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
handbook, halfp1age
2
MAM406
Marking code: D4.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) (SC-76) and
symbol.
ORDERING INFORMATION
TYPE
NUMBER
BAS416
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VRRM
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
PARAMETER
CONDITIONS
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
see Fig.2
repetitive peak forward current
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
total power dissipation
storage temperature
Tamb = 25 °C; note 1
junction temperature
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
MAX.
85
75
200
500
UNIT
V
V
mA
mA
−
4
A
−
1
A
−
0.5
A
−
250
mW
−65
+150 °C
−
150
°C
2004 Jan 26
2
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