BAT54ALT1 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BAT54ALT1

Schottky Barrier Diodes

ON Semiconductor 

BAT54ALT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (IR = 10 µA)

Total Capacitance (VR = 1.0 V, f = 1.0 MHz)

Reverse Leakage (VR = 25 V)

V(BR)R

30

CT

–

IR

–

–

–

Volts

7.6

10

pF

0.5

2.0

µAdc

Forward Voltage (IF = 0.1 mAdc)

Forward Voltage (IF = 30 mAdc)

Forward Voltage (IF = 100 mAdc)

VF

–

0.22

0.24

Vdc

VF

–

0.41

0.5

Vdc

VF

–

0.52

0.8

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)

trr

–

–

5.0

ns

Forward Voltage (IF = 1.0 mAdc)

Forward Voltage (IF = 10 mAdc)

Forward Current (DC)

VF

–

0.29

0.32

Vdc

VF

–

0.35

0.40

Vdc

IF

–

–

200

mAdc

Repetitive Peak Forward Current

Non–Repetitive Peak Forward Current (t < 1.0 s)

IFRM

–

IFSM

–

–

300

mAdc

–

600

mAdc

http://onsemi.com

2

Share Link: