BB505M View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

BB505M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB505M

900 MHz Power Gain, Noise Figure Test Circuit

VG1 VG2

C4

C5

VD

C6

Input (50 Ω)

R1

R2

C3

G2

G1

L1 L2

R3

RFC

D

L3 L4

S

Output (50 Ω)

C1

C2

C1, C2 :

C3 :

C4 to C6 :

R1 :

R2 :

R3 :

Variable Capacitor (10 pF MAX)

Disk Capacitor (1000 pF)

Air Capacitor (1000 pF)

220 kΩ

47 kΩ

4.7 kΩ

L1:

10

L2:

26

21

L3:

29

L4:

18

(φ1mm Copper wire)

Unit : mm

RFC : φ1mm Copper wire with enamel 4 turns inside dia 6 mm

Rev.1.00, Jun.14.2004, page 3 of 8

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