BC636 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BC636 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
PNP medium power transistors
Product specification
BC636; BC638; BC640
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Audio and video amplifiers.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic
package. NP complements: BC635, BC637 and BC639.
handbook, halfpage1
2
3
2
1
3
MAM285
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BC636
BC638
BC640
VCEO
collector-emitter voltage
BC636
BC638
BC640
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
−45
V
−
−60
V
−
−100
V
−
−45
V
−
−60
V
−
−80
V
−
−5
V
−
−1
A
−
−1.5
A
−
−200
mA
−
0.83
W
−65
+150
°C
−
150
°C
−65
+150
°C
1999 Apr 23
2
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