BC636 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BC636 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium power transistors
Product specification
BC636; BC638; BC640
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
150
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBE
fT
hh----FF---EE---12-
DC current gain
BC636-10
BC636-16; BC638-16; BC640-16
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
CONDITIONS
MIN.
IE = 0; VCB = −30 V
−
IE = 0; VCB = −30 V; Tj = 150 °C
−
IC = 0; VEB = −5 V
−
VCE = −2 V; see Fig.2
IC = −5 mA
40
IC = −150 mA
63
IC = −500 mA
25
IC = −150 mA; VCE = −2 V; see Fig.2
63
100
IC = −500 mA; IB = −50 mA
−
IC = −500 mA; VCE = −2 V
−
IC = −50 mA; VCE = −5 V; f = 100 MHz 100
IC = 150 mA; VCE = 2 V
−
MAX.
−100
−10
−100
UNIT
nA
µA
nA
−
250
−
160
250
−0.5 V
−1
V
−
MHz
1.6
1999 Apr 23
3
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