BC846AS(2017) View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

Manufacturer

BC846AS
(Rev.:2017)

65V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR IN SOT363

Diodes Incorporated. 

BC846AS

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic (Note 7)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

Collector-Cutoff Current

Emitter-Cutoff Current

Symbol Min

Typ

BVCBO

80

—

BVCEO

65

—

BVEBO

6

—

hFE

110

—

VCE(SAT)

—

90

200

VBE(SAT)

—

700

900

580

660

VBE(ON)

—

—

ICBO

—

—

—

—

ICES

—

—

Gain Bandwidth Product

fT

100

—

Collector-Base Capacitance

CCBO

—

2.0

Note:

7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

Max

—

—

—

220

250

600

—

700

770

15

5

15

—

—

Unit

V

V

V

—

mV

mV

mV

nA

µA

nA

MHz

pF

Test Condition

IC = 100µA, IB = 0

IC = 10mA, IB = 0

IE = 100µA, IC = 0

VCE = 5V, IC = 2mA

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5mA

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5mA

VCE = 5V, IC = 2mA

VCE = 5V, IC = 10mA

VCB = 40V

VCB = 30V, TA = +125°C

VCE = 80V, IC = 0

VCE = 5V, IC = 10mA,

f = 100MHz

VCB = 10V, f = 1MHz

BC846AS

Document number: DS30833 Rev. 8 - 2

3 of 7

www.diodes.com

October 2017

© Diodes Incorporated

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