BCV61C View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BCV61C Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN general purpose double transistor
Product specification
BCV61
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Transistor TR1
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
VBE
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 µA; VCE = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA; note 1
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V; note 2
IC = 10 mA; VCE = 5 V; note 2
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
Transistor TR2
VEBS
hFE
base-emitter forward voltage
DC current gain
BCV61A
VCB = 0; IE = −250 mA
VCB = 0; IE = −10 µA
IC = 2 mA; VCE = 5 V
BCV61B
BCV61C
MIN. TYP. MAX. UNIT
−
−
15
nA
−
−
5
µA
−
−
100 nA
100 −
−
110 −
800
−
90
250 mV
−
200 600 mV
−
700 −
mV
−
900 −
mV
580 660 700 mV
−
−
770 mV
−
2.5 −
pF
100 −
−
MHz
−
−
10
dB
−
−
−400 −
110 −
200 −
420 −
−1.8 V
−
mV
220
450
800
1999 Apr 08
3
Share Link: 