BD684(V2) View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
BD684 Datasheet PDF : 2 Pages
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PNP BD684
NPN BD683
SILICON DARLINGTON POWER
TRANSISTORS
The BD684 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio
and video applications.
They are mounted in Jedec TO-126 plastic package.
NPN complements are BD683 .
ABSOLUTE MAXIMUM RATINGS
Symbol
-VCEO
-VCBO
-VEBO
-IC
-IB
PT
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
-IC
-ICM
-IBM
@ Tmb = 25°C
Value
120
120
5
4
6
0.1
40
150
-65 to +150
Unit
V
V
V
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
RthJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
3.12
100
Unit
K/W
K/W
COMSET SEMICONDUCTORS
1
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