BD895A View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BD895A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD895A/897A/899A
DESCRIPTION
·With TO-220C package
·Complement to type BD896A/898A/900A
·DARLINGTON
APPLICATIONS
·For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
导体 SYMBOL
PARAMETER
CONDITIONS
固I电NC半HANGE SEMICONDUCTOR BD895A
VCBO
Collector-base voltage BD897A Open emitter
BD899A
BD895A
VALUE
45
60
80
45
UNIT
V
VCEO
Collector-emitter voltage BD897A Open base
60
V
BD899A
80
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current-DC
8
A
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
Ta=25℃
300
mA
70
W
2
150
℃
-65~150
℃
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