BDT62 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BDT62 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT62/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT62
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT62A
BDT62B
IC= -30mA; IB= 0
BDT62C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB=B -12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB=B -80mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDT62
Collector
Cutoff Current
BDT62A
BDT62B
BDT62C
BDT62
IC= -3A; VCE= -3V
VCB= -60V; IE= 0
VCB= -30V; IE= 0; TJ=150℃
VCB= -80V; IE= 0
VCB= -40V; IE= 0; TJ=150℃
VCB= -100V; IE= 0
VCB= -50V; IE= 0; TJ=150℃
VCB= -120V; IE= 0
VCB= -60V; IE= 0; TJ=150℃
VCE= -30V; IB=B 0
ICEO
Collector
Cutoff Current
BDT62A VCE= -40V; IB=B 0
BDT62B VCE= -50V; IB=B 0
BDT62C VCE= -60V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A; VCE= -3V
hFE-2
DC Current Gain
IC= -10A; VCE= -3V
VECF
C-E Diode Forward Voltage
IE= -3A
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -3A; IB1= -IB2= -12mA
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2.0 V
-2.5 V
-2.5 V
-0.2
-2.0
-0.2
-2.0
mA
-0.2
-2.0
-0.2
-2.0
-0.5
-0.5
mA
-0.5
-0.5
-5 mA
1000
200
-2.0 V
0.5
μs
2.5
μs
isc Website：www.iscsemi.cn
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