BDW51 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BDW51 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDW51/A/B/C
DESCRIPTION
·Collector Current -IC= 15A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A
80V(Min)- BDW51B; 100V(Min)- BDW51C
·Complement to Type BDW52/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW51
45
VCBO
Collector-Base
Voltage
BDW51A
60
V
BDW51B
80
BDW51C
100
BDW51
45
VCEO
Collector-Emitter
Voltage
BDW51A
60
V
BDW51B
80
BDW51C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IBB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
7
A
125
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.4
UNIT
℃/W
isc Website：www.iscsemi.cn
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