BDW63 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BDW63 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDW63/A/B/C/D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDW63
CONDITIONS
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDW63A
BDW63B IC= 30mA; IB=0
BDW63C
BDW63D
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB=B 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB=B 60mA
VBE(on)
VECF
Base-Emitter On Voltage
C-E Diode Forward Voltage
IC= 2A; VCE= 3V
IF= 6A
BDW63
VCE= 30V; IB=B 0
BDW63A VCE= 30V; IB=B 0
ICEO
Collector Cutoff Current BDW63B VCE= 40V; IB=B 0
BDW63C VCE= 50V; IB=B 0
BDW63D VCE= 60V; IB=B 0
BDW63
VCB= 45V; IE= 0
VCB= 45V; IE= 0; TJ= 150℃
BDW63A
VCB= 60V; IE= 0
VCB= 60V; IE= 0; TJ= 150℃
ICBO
Collector Cutoff Current BDW63B
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TJ= 150℃
BDW63C
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TJ= 150℃
BDW63D
VCB= 120V; IE= 0
VCB= 120V; IE= 0; TJ= 150℃
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 2A; VCE= 3V
hFE-2
DC Current Gain
IC= 6A; VCE= 3V
Switching times
ton
Turn-on Time
toff
Turn-off Time
IC= 3A; IB1= -IB2= 12mA;
VBE(off)= -4.5V, RL=10Ω
MIN TYP.
45
MAX
UNIT
60
80
V
100
120
2.5
V
4.0
V
2.5
V
3.5
V
0.5
mA
0.2
5.0
0.2
5.0
0.2
5.0
mA
0.2
5.0
0.2
5.0
2.0
mA
750
20000
100
1.0
μs
5.0
μs
isc Website：www.iscsemi.cn
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