BDW41 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

BDW41

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

BDW41

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 10mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 50mA

VBE(on) Base-Emitter On Voltage

IC= 10A; VCE= 4V

80

V

2.0

V

3.0

V

3.0

V

ICBO

Collector Cutoff Current

VCB= 80V; IE= 0

1.0 mA

ICEO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

hFE-1

DC Current Gain

hFE-2

DC Current Gain

fT

Current-Gain—Bandwidth Product

COB

Output Capacitance

VCE= 40V; IB=B 0

VEB= 5V; IC= 0

IC= 5A; VCE= 4V

1000

IC= 10A; VCE= 4V

250

IC= 3A; VCE= 3V; ftest= 1MHz

4

IE= 0; VCB= 10V; ftest= 0.1MHz

2.0 mA

2.0 mA

MHz

200 pF

isc Website：www.iscsemi.cn

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