BDX65 View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

BDX65

NPN SILICON DARLINGTONS

Unspecified 

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

BDX65

BDX65A

BDX65B

BDX65C

Value

1.5

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=0.1 A, IB=0, L=25mH

ICEO

IEBO

ICBO

VCE(SAT)

Collector Cutoff Current

Emitter Cutoff Current

VCE=30 V

VCE=40 V

VCE=50 V

VCE=60 V

VBE=5 V

Collector-Base Cutoff

Current

VCBO=60 V

VCBO=40 V

TCASE=200°C

VCBO=50 V

VCBO=80 V

TCASE=200°C

VCBO=100 V

VCBO=60 V

TCASE=200°C

VCBO=120 V

VCBO=70 V

TCASE=200°

Collector-Emitter saturation

Voltage (*)

IC=5.0 A, IB=20 mA

VF

Forward Voltage (pulse

method)

IF=3 A

BDX65 60 - -

BDX65A 80 -

BDX65B 100 -

-

-

V

BDX65C 120 - -

BDX65

-

BDX65A -

BDX65B -

BDX65C -

BDX65

BDX65A

BDX65B

-

BDX65C

-

BDX65

-

-

BDX65A -

-

BDX65B -

-

BDX65C -

-

-

-

1 mA

-

- 5.0 mA

- 0.4

-3

- 0.4

-3

- 0.4

-

-3

- 0.4

-

3

BDX65

BDX65A

BDX65B

-

-

2

V

BDX65C

BDX65

BDX65A

BDX65B

-

1.8

-

V

BDX65C

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