BDX84 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

BDX84

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

BDX84/A/B/C

DESCRIPTION

·High DC Current Gain-

: hFE= 1000(Min)@ IC= -5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A

-80V(Min)- BDX84B; -100V(Min)- BDX84C

APPLICATIONS

·Power switching

·Hammer drivers

·Series and shunt regulators

·Audio amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

BDX84

-45

UNIT

BDX84A

-60

VCBO

Collector-Base Voltage

V

BDX84B

-80

BDX84C -100

BDX84

-45

BDX84A

-60

VCEO

Collector-Emitter Voltage

V

BDX84B

-80

BDX84C -100

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

IBB

Base Current

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-250

mA

125

W

200

℃

Tstg

Storage Temperature Range

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

isc Website：www.iscsemi.cn

MAX UNIT

1.4 ℃/W

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