BF1207 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BF1207

Dual N-channel dual gate MOSFET

Philips Electronics 

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

8.1.2 Scattering parameters for amplifier A

Table 9: Scattering parameters for amplifier A

VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 18 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.

f

s11

(MHz) Magnitude Angle

(ratio)

(deg)

s21

Magnitude

(ratio)

Angle

(deg)

s12

Magnitude Angle

(ratio)

(deg)

s22

Magnitude Angle

(ratio)

(deg)

50 0.987

−4.169 2.87

175.5 0.0008

83.82 0.992

−1.42

100 0.983

−8.109 2.95

171.14 0.0015

82.08 0.992

−2.86

200 0.976

−15.97 2.93

162.44 0.0028

77.50 0.990

−5.66

300 0.966

−23.844 2.89

153.77 0.0041

73.45 0.989

−8.49

400 0.952

−31.575 2.84

145.23 0.0053

69.42 0.986

−11.28

500 0.935

−35.225 2.78

136.82 0.0063

65.72 0.984

−14.03

600 0.917

−46.678 2.72

128.50 0.0072

61.48 0.981

−16.80

700 0.898

−54.094 2.65

120.44 0.0079

58.05 0.977

−19.55

800 0.876

−61.205 2.57

112.33 0.0084

52.74 0.974

−22.32

900 0.852

−68.299 2.49

104.32 0.0089

48.61 0.970

−25.10

1000 0.826

−75.321 2.41

96.42 0.0091

43.86 0.967

−27.88

9397 750 14955

Product data sheet

Rev. 01 — 28 July 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

11 of 22

Share Link: