BF1207 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BF1207

Dual N-channel dual gate MOSFET

Philips Electronics 

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

8.2 Dynamic characteristics for amplifier B

Table 10: Dynamic characteristics for amplifier B

Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 14 mA. [1]

Symbol Parameter

Conditions

Min Typ

yfs

forward transfer admittance Tj = 25 °C

26 31

Ciss(G1) input capacitance at gate1 f = 100 MHz

- 1.8

Ciss(G2) input capacitance at gate2 f = 1 MHz

- 3.5

Coss

output capacitance

f = 100 MHz

- 0.8

Crss

reverse transfer capacitance f = 100 MHz

- 20

Gtr

power gain

BS = BS(opt); BL = BL(opt)

f = 200 MHz; GS = 2 mS; GL = 0.5 mS

30 34

f = 400 MHz; GS = 2 mS; GL = 1 mS

27 31

f = 800 MHz; GS = 3.3 mS; GL = 1 mS

23 27

NF

noise figure

f = 11 MHz; GS = 20 mS; BS = 0 S

-5

f = 400 MHz; YS = YS(opt)

- 1.3

f = 800 MHz; YS = YS(opt)

- 1.4

Xmod cross-modulation

input level for k = 1 %; fw = 50 MHz; funw = 60 MHz [2]

at 0 dB AGC

90 -

at 10 dB AGC

- 88

at 20 dB AGC

- 94

at 40 dB AGC

100 103

Max Unit

41 mS

2.3 pF

- pF

- pF

- fF

38 dB

35 dB

31 dB

- dB

- dB

- dB

- dBµV

- dBµV

- dBµV

- dBµV

[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.

[2] Measured in Figure 30 test circuit.

9397 750 14955

Product data sheet

Rev. 01 — 28 July 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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