BF1211 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BF1211 Datasheet PDF : 15 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 µH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1 000
s11
MAGNITUDE
(ratio)
0.987
0.985
0.979
0.965
0.949
0.929
0.904
0.876
0.846
0.816
0.791
ANGLE
(deg)
−3.86
−7.73
−15.25
−22.84
−30.15
−30.25
−44.24
−51.16
−58.16
−65.15
−72.22
s21
MAGNITUDE
(ratio)
2.928
2.921
2.807
2.846
2.784
2.704
2.639
2.558
2.486
2.402
2.315
ANGLE
(deg)
175.8
171.6
163.2
155.0
146.7
138.9
130.9
123.0
115.1
107.2
99.9
s12
MAGNITUDE
(ratio)
0.0005
0.0010
0.0015
0.0028
0.0034
0.0037
0.0040
0.0039
0.0037
0.0032
0.0028
ANGLE
(deg)
89.3
86.9
91.1
77.4
74.0
71.4
69.6
69.0
70.0
74.5
87.1
s22
MAGNITUDE
(ratio)
0.993
0.993
0.993
0.988
0.985
0.981
0.976
0.971
0.965
0.960
0.956
ANGLE
(deg)
−1.58
−3.14
−6.31
−9.41
−12.48
−15.54
−18.59
−21.65
−24.27
−27.79
−30.94
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
400
0.9
0.693
800
1.3
0.707
(deg)
16.75
37.33
Rn
(Ω)
29.85
29.90
2003 Dec 16
10
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