BF1204 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BF1204 Datasheet PDF : 13 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1204
20
handbook, halfpage
ID
(mA)
16
MCD956
12
8
4
0
0
10
20
30
40
50
IG1 (μA)
VDS = 5 V; VG2-S = 4 V.
Tj = 25 C.
Fig.7 Drain current as a function of gate 1 current;
typical values.
handbook,1h6alfpage
ID
(mA)
12
MCD957
8
4
0
0
1
2
3
4
5
VGG (V)
VDS = 5 V; VG2-S = 4 V; Tj = 25 C.
RG1 = 120 k (connected to VGG); see Fig.19.
Fig.8 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
handbook,2h0alfpage
ID
(mA)
16
12
8
4
0
0
2
MCD958
RG1 = 68 kΩ
82 kΩ
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
4
6
VGG = VDS (V)
16
handbook, halfpage
ID
(mA)
12
8
4
0
0
2
MCD959
VGG = 5 V
4.5 V
4V
3.5 V
3V
4
6
VG2-S (V)
VG2-S = 4 V; Tj = 25 C.
RG1 connected to VGG; see Fig.19.
Fig.9 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
VDS = 5 V; Tj = 25 C.
RG1 = 120 k (connected to VGG); see Fig.19.
Fig.10 Drain current as a function of gate 2
voltage; typical values.
2010 Sep 16
6
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