BF1217 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BF1217 Datasheet PDF : 17 Pages
| |||
NXP Semiconductors
BF1217WR
N-channel dual gate MOSFET
40
ID
(mA)
30
20
10
001aam161
(1)
(2)
(3)
(4)
(5)
40
ID
(mA)
30
20
10
(1)
(2)
(3)
(4)
(5)
(6)
001aam162
0
0
1
2
3
(1) RG1 = 20 k
(2) RG1 = 40 k
(3) RG1 = 80 k
(4) RG1 = 120 k
(5) RG1 = 160 k
VG2-S = 4 V; Tj = 25 C.
4
5
VGG = VDS (V)
Fig 8. Drain current as a function of VDS and VGG;
typical values
0
0
1
2
3
4
5
VG2-S (V)
(1) VGG = 5.0 V
(2) VGG = 4.5 V
(3) VGG = 4.0 V
(4) VGG = 3.5 V
(5) VGG = 3.0 V
(6) VGG = 2.5 V
Tj = 25 C; RG1 = 82 k (connected to VGG).
Fig 9. Drain current as a function of gate2 voltage;
typical values
BF1217WR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 June 2011
© NXP B.V. 2011. All rights reserved.
8 of 17
Share Link: 