BF961A View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
BF961A Datasheet PDF : 7 Pages
| |||
BF961
Vishay Semiconductors
VISHAY
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown
ID = 10 µA, - VG1S = - VG2S = 4 V
V(BR)DS
20
V
voltage
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0
± V(BR)G1SS
8
14
V
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0
± V(BR)G2SS
8
14
V
Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0
± IG1SS
100
nA
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
100
nA
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V BF961
IDSS
4
20
mA
BF961A
IDSS
4
10.5
mA
BF961B
IDSS
9.5
20
mA
Gate 1 - source cut-off voltage VDS = 15 V, VG2S = 4 V,
ID = 20 µA
- VG1S(OFF)
3.5
V
Gate 2 - source cut-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA
- VG2S(OFF)
3.5
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
| y21s |
12
15
mS
Gate 1 input capacitance
Cissg1
3.7
pF
Gate 2 input capacitance
VG1S = 0, VG2S = 4 V
Cissg2
1.6
pF
Feedback capacitance
Crss
25
fF
Output capacitance
Coss
1.6
pF
Power gain
GS = 2 mS, GL = 0.5 mS,
Gps
20
dB
f = 200 MHz
AGC range
VG2S = 4 to - 2 V, f = 200 MHz
∆Gps
50
dB
Noise figure
GS = 2 mS, GL = 0.5 mS,
F
f = 200 MHz
1.8
2.5
dB
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
250
200
150
100
50
0
0
96 12159
20 40 60 80 100 120 140 160
Tamb - Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
22
20
VG1S = 0.6 V
18
16
0.4 V
14
0.2 V
12
10
0
8
–0.2 V
6
–0.4 V
4
–0.6 V
2
–0.8 V
0
0 2 4 6 8 10 12 14 16 18 20 22 24
96 12160
VDS – Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
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2
Document Number 85002
Rev. 1.5, 25-Nov-04
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