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Part Name
Description
BF998R View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BF998R
Silicon N_Channel MOSFET Tetrode
Infineon Technologies
BF998R Datasheet PDF : 6 Pages
1
2
3
4
5
6
BF998...
Power gain
G
ps
=
ƒ
(
V
G2S
)
f
= 800 MHz
20
dB
Power gain
G
ps
=
ƒ
(
V
G2S
)
f
= 800 MHz
20
dB
10
10
5
5
0
0
-5
-5
-10
0
1
2
V
4
V
G2S
-10
0
1
2
V
4
V
G2S
Gate 1 input capacitance
C
g1ss
=
ƒ
(
V
G1S
)
Output capacitance
C
dss
=
ƒ
(
V
DS
)
2.6
4
pF
pF
2.2
3
2
2.5
1.8
2
1.6
1.5
1.4
1
1.2
0.5
1
-3 -2.6 -2.2 -1.8 -1.4 -1 -0.6
V
0.2
V
G1S
6
0
0
2
4
6
8
V
12
V
DS
Feb-13-2004
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