BF908WR View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

BF908WR

N-channel dual-gate MOS-FET

NXP Semiconductors. 

NXP Semiconductors

N-channel dual-gate MOS-FET

Preliminary specification

BF908WR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VDS

ID

IG1

IG2

Ptot

Tstg

Tj

PARAMETER

drain-source voltage

drain current

gate 1 current

gate 2 current

total power dissipation

storage temperature

operating junction temperature

CONDITIONS

up to Tamb = 45 C; see Fig.2;

note 1

Note

1. Device mounted on a printed-circuit board.

MIN.











MAX.

12

40

10

10

300

UNIT

V

mA

mA

mA

mW

65

+150

C



+150

C

400

handbook, halfpage

Ptot

(mW)

300

MLD154

200

100

0

0

50

100

150

200

Tamb (oC)

Fig.2 Power derating curve.

1995 Apr 25

3

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