BFG10W View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BFG10W Datasheet PDF : 9 Pages
| |||
Philips Semiconductors
UHF power transistor
Product specification
BFG10W/X
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
hFE
Cc
Cre
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
open emitter; IC = 0.1 mA
open base; IC = 5 mA
open collector; IE = 0.1 mA
VCE = 6 V; VBE = 0
IC = 50 mA; VCE = 5 V
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCE = 6 V; f = 1 MHz
MIN.
20
10
2.5
−
25
−
−
MAX.
−
−
−
100
−
3
2
UNIT
V
V
V
µA
pF
pF
handbook1, 0fu3ll pagewidth
Zth j-a
(K/W)
102
10
δ=1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
1
10−6
10−5
10−4
10−3
MBG431
10−2
P
δ
=
tp
T
tp
t
T
10−1
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3
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