BFR520T View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BFR520T Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Preliminary specification
BFR520T
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 118 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
190 K/W
CHARACTERISTICS
Tj = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Ce
Cc
Cre
fT
GUM
S212
F
PL1
ITO
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
IE = 0; VCE = 6 V
IC = 20mA; VCE = 6 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCB = 6 V; f = 1 MHz
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
Ic = 20 mA; VCE = 6 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
note 2
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log (---1-----–------S----1---1---S-2---)2--(-1--1--2--–------S-----2--2----2----) dB.
MIN. TYP. MAX. UNIT
−
−
50 nA
60 120 250
−
1
−
pF
−
0.5 −
pF
−
0.4 −
−
9
−
pF
GHz
−
15 −
dB
−
9
−
dB
13 14 −
dB
−
1.1 1.6 dB
−
1.6 2.1 dB
−
1.9 −
dB
−
17 −
dBm
−
26 −
dBm
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz.
1999 Oct 18
3
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