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BGY282 View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BGY282 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
CHARACTERISTICS
ZS = ZL = 50 ; PD1,2 = 0 dBm; VS1 = VS2 = 3.5 V; VAPC 2.2 V; Tmb = 25 °C; tp = 575 µs; δ = 1 : 8;
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); measured on demoboard of fig 7; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
Vband
band switch voltage
GSM1800 selected
GSM900 selected
Iband
IL
ICM1, ICM2
PD1
PD2
PL1
PL2
η1
η2
H2, H3
VSWRin
band switch current
leakage current
peak control current
VAPC = 0.2 V; PD1,2 = 0 mW
input drive power (GSM900)
input drive power (GSM1800)
load power GSM900
load power GSM1800
efficiency GSM900
efficiency GSM1800
harmonics GSM900
harmonics GSM1800
input VSWR of active device
input VSWR of inactive
device
VAPC = 2.2 V
VAPC = 2.2 V; VS1 = 3.1 V
VAPC = 2.2 V
VAPC = 2.2 V; VS1 = 3.1 V
VAPC = 2 V
VAPC = 2 V
PL1 = 34.7 dBm
PL2 = 32.3 dBm
VS1,2 = 3.1 to 4.4 V; PD1,2 = 0 dBm;
PL1 = 5 to 34.7 dBm;
PL2 = 0 to 32.3 dBm
VS1,2 = 3.1 to 5.15 V; VAPC 0.5 V
stability
VS1,2 = 3 to 5 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm; PL1 = <35 dBm;
PL2 = <33 dBm; VSWR = 6 : 1 through
all phases
VS1,2 = 3.1 to 4.2 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm; PL1 = <34 dBm;
PL2 = <32 dBm; VSWR = 6 : 1 through
all phases; δ = 4 : 8
isolation
second harmonic isolation
from GSM900 into GSM1800
VAPC = 0.5 V; PD1 = 3 dBm;
PD2 = 5 dBm
PL1 = 34.7 dBm
maximum control slope
5 dBm < PL1,2 < PL max
tr
carrier rise time
PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm;
time to settle within 0.5 dB of final PL
tf
carrier fall time
PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm;
time to settle within 0.5 dB of final PL
MIN.
0
1.7
3
3
34.7
34.2
32.3
31.7
43
38
120
TYP.
2
35
34.5
33
32.3
50
45
1.5
1.5
MAX.
0.7
5.5
30
10
2
4
5
38
35
3:1
8:1
60
60
36
20
200
2
2
UNIT
V
V
µA
µA
mA
dBm
dBm
dBm
dBm
dBm
dBm
%
%
dBc
dBc
dBc
dBc
dBm
dBm
dB/V
µs
µs
2001 Dec 04
4

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