BSP125L6327 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP125L6327

SIPMOS Small-Signal-Transistor

Infineon Technologies 

Rev. 2.1

SIPMOS Power-Transistor

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

• Pb-free lead plating; RoHS compliant

x Qualified according to AEC Q101

BSP125

Product Summary

VDS

600 V

RDS(on) 45 Ω

ID

0.12 A

PG-SOT223

Type Package RoHS compliant Tape and Reel Information Marking Packaging

BSP125 PG-SOT223 Yes

L6433: 4000 pcs/reel

BSP125 Non dry

BSP125 PG-SOT223 Yes

L6327: 1000 pcs/reel

BSP125 Non dry

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Continuous drain current

TA=25°C

TA=70°C

ID

0.12

0.1

Pulsed drain current

TA=25°C

Reverse diode dv/dt

ID puls

dv/dt

0.48

6

IS=0.12A, VDS=480V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage

ESD Class (JESD22-A114-HBM)

VGS

±20

1A (>250V, <500V)

Power dissipation

TA=25°C, TA=25

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Ptot

Tj , Tstg

1.8

-55... +150

55/150/56

Unit

A

kV/µs

V

W

°C

Page 1

2009-08-18

Share Link: