DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BSP125L6327 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
BSP125L6327
Infineon
Infineon Technologies 
BSP125L6327 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Rev. 2.1
BSP125
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
Dynamic Characteristics
Transconductance
gfs
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
min. typ. max.
VDS2*ID*RDS(on)max,
ID=0.1A
VGS=0, VDS=25V,
f=1MHz
VDD=300V, VGS=10V,
ID=0.13A, RG=6
0.06 0.18 - S
- 100 150 pF
-
8.2 12.3
-
3.2 4.8
-
7.7 11.6 ns
- 14.4 21
-
20 30
- 110 165
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=400V, ID=0.13A
VDD=400V, ID=0.13A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=400V, ID=0.13A
- 0.27 0.3 nC
-
2.3 3.5
-
4.4 6.6
- 3.44 - V
Reverse Diode
Inverse diode continuous
IS
forward current
TA=25°C
-
- 0.12 A
Inv. diode direct current, pulsedISM
Inverse diode forward voltage VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
VGS=0, IF=0.12A
VR=300V, IF=lS,
diF/dt=100A/µs
-
- 0.48
-
0.8 1.2 V
- 156 235 ns
- 165 250 nC
Page 3
2009-08-18

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]