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Part Name
Description
BSP125L6327 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSP125L6327
SIPMOS Small-Signal-Transistor
Infineon Technologies
BSP125L6327 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
Rev. 2.
1
BSP125
13 Typ. gate charge
V
GS
=
f
(
Q
G
); parameter:
V
DS
,
ID = 0.12 A pulsed,
T
j
= 25 °C
BSP125
16
V
14 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
BSP125
720
V
12
10
0.2
V
DS max
8
0.5
V
DS max
6
0.8
V
DS max
4
2
0
0
1
2
3
4
5
nC
6.5
Q
G
680
660
640
620
600
580
560
540
-60 -20
20
60 100
°C
180
T
j
Page 7
200
9
-0
8
-
18
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