BSP299 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSP299 Datasheet PDF : 10 Pages
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BSP299
Drain-source on-resistance
RDS (on) = Æ’(Tj)
parameter: ID = 0.4 A, VGS = 10 V
Gate threshold voltage
VGS (th) = Æ’(Tj)
parameter: VGS = VDS, ID = 1 mA
10 11
È
Ω 10
R
DS (on)
89
8
7
7
6
6
98%
4.6
V
4.0
V
GS(th)
3.6
3.2
2.8
55
98%
typ
typ
2.4
2.0
44
33
1.6
2
1.2
2
1
0.8
1
0
0 -60 -20 20
-60
-20
20
60 100 140 180
60
100 °C
Tj
160
0.4
0.0
-60
-20
98%
typ
2%
20
60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 1
Forward characteristics of reverse diode
IF = Æ’(VSD)
parameter: Tj, tp = 80 µs
10 1
nF
C
10 0
A
I
F
10 0
C
iss
10 -1
C
oss
10 -2
0
C
rss
5 10 15 20 25 30 V 40
V
DS
Rev 2.4
7
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
2012-11-29
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