BSP320 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BSP320

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSP 320 S

Avalanche energy EAS = ƒ(Tj)

parameter: ID = 2.9 A, VDD = 25 V

RGS = 25 Ω, L = 14.3 mH

65

mJ

55

EAS 50

45

40

35

30

25

20

15

10

5

0

20 40 60 80 100 120 °C 160

Tj

Typ. gate charge

VGS = ƒ(QGate)

parameter: ID puls = 3 A

16

V

VGS

12

10

8

0,2 VDS max

6

0,8 VDS max

4

2

0

0

2

4

6

8 10

14

QGate

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

71

V

68

V(BR)DSS

66

64

62

60

58

56

54

-60

-20

20

Semiconductor Group

60

100 °C 160

Tj

8

29/01/1998

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