BSP 324
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.38
A
Ptot = 2W
0.32
ID
0.28
kl
ji ghf e
0.24
0.20
0.16
0.12
0.08
VGS [V]
da
2.5
b
3.0
c
3.5
d
4.0
e
4.5
f
5.0
g
5.5
ch
6.0
i
7.0
j
8.0
k
9.0
l
10.0
b
0.04
a
0.00
0
4
8
12
16 V 22
VDS
Typ. drain-source on-resistance
RDS (on) = Æ’(ID)
parameter: tp = 80 µs, Tj = 25 °C
80
a
b
c
Ω
RDS (on)
60
50
40
30
20
d
j hf
igek
10 VGS [V] =
abcdef
23.50 3.5 4.0 4.5 5.0 5.5
0
ghi j k
6.0 7.0 8.0 9.0 10.0
0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A 0.34
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
0.45
A
ID 0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
0.25
gfs
S
0.15
0.10
0.05
0.00
0.00 0.05 0.10 0.15 0.20 0.25 0.30 A 0.40
ID
Sep-12-1996