BSP316P(2007) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP316P
(Rev.:2007)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

13 Typ. gate charge

VGS = f (QGate)

parameter: ID = -0.68 A pulsed, Tj = 25 °C

BSP 316 P

-16

V

-12

-10

-8

-6

-4

0.2 VDS max

0.5 VDS max

-2

0.8 VDS max

0

0 1 2 3 4 5 6 7 nC 8.5

|QG|

BSP 316 P

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

BSP 316 P

-120

V

-114

-112

-110

-108

-106

-104

-102

-100

-98

-96

-94

-92

-90

-60 -20

20

60 100 °C

180

Tj

Rev.1.5

Page 7

2007-02-23

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