BSP320 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP320

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

BSP 320S

Electrical Characteristics

Parameter

at Tj = 25 ˚C, unless otherwise specified

Dynamic Characteristics

Gate charge at threshold

VDD = 40 V, ID = 0.1 A, VGS = 1 V

Gate charge at Vgs=7V

VDD = 40 V, ID = 2.9 A, VGS = 0 to 7 V

Gate charge total

VDD = 40 V, ID = 2.9 A, VGS = 0 to 10 V

Gate plateau voltage

VDD = 40 V, ID = 2.9 A

Symbol

Values

Unit

min. typ. max.

QG(th)

-

Qg(7)

-

Qg

-

V(plateau)

-

0.25 0.3 nC

7.4 9.3 nC

9.7 12

4.7

-V

Reverse Diode

Inverse diode continuous forward current

IS

TA = 25 ˚C

-

-

2.9 A

Inverse diode direct current,pulsed

TA = 25 ˚C

ISM

-

- 11.6

Inverse diode forward voltage

VGS = 0 V, IF = 5.8 A

VSD

- 0.95 1.2 V

Reverse recovery time

VR = 30 V, IF=IS , diF/dt = 100 A/µs

Reverse recovery charge

VR = 30 V, IF=lS , diF/dt = 100 A/µs

trr

-

45 56 ns

Qrr

- 0.08 0.12 µC

Data Sheet

4

05.99

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