BSP603S2L(2000) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSP603S2L Datasheet PDF : 5 Pages
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Target data sheet
BSP603S2L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Dynamic Characteristics
Transconductance
gfs
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
VDS≥2*ID*RDS(on)max ,
tbd
ID =4.1
VGS=0V, VDS=25V,
-
f=1MHz
-
-
VDD=30V, VGS=4.5V,
-
ID=5.2A, RG=5.6Ω
VDD=30V, VGS=4.5V,
-
ID=5.2mA, RG=5.6Ω
-
-
Values
typ.
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
max.
-
tbd
tbd
tbd
tbd
tbd
tbd
tbd
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
VDD=40V, ID=5.2A
Qgd
Qg
VDD=40V, ID=5.2A,
VGS=0 to 10V
V(plateau) VDD=40V, ID=5.2A
Reverse Diode
Inverse diode continuous
IS
forward current
TA=25°C
Inverse diode direct current, ISM
pulsed
Inverse diode forward voltage VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Soft factor tf / ts
S
VGS=0V, IF=5.2A
VR=30V, IF=lS,
diF/dt=100A/µs
-
tbd tbd nC
-
tbd tbd
-
tbd tbd
-
tbd
-V
-
-
5.2 A
-
-
21
-
tbd tbd V
-
tbd tbd ns
-
tbd tbd nC
-
tbd
-
Page 3
2000-04-28
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