Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
2N603L View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
2N603L
OptiMOS Power-Transistor
Infineon Technologies
2N603L Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
1 Power dissipation
P
tot
=
f
(
T
C
)
parameter:
V
GS
≥
4 V
BSP603S2L
2.4
W
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= --
10
2
BSP603S2L
A
10
1
/
I
D
=
V
DS
R
DS(on)
t
p
= 160.0µs
1 ms
2 Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
≥
10 V
BSP603S2L
6
A
BSP603S2L
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 20 40 60 80 100 120
°C
160
T
C
4 Max. transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
2
BSP603S2L
K/W
10
1
10
0
10
0
10
-1
10
-2
10
-1
10
0
10 ms
DC
10
1
V
10
2
V
DS
Page 4
10
-1
10
-2
10
-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
10
2
t
p
2003-10-29
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]