BSS225 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSS225 Datasheet PDF : 9 Pages
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13 Typ. gate charge
V GS=f(Q gate); I D=0.1 A pulsed
parameter: V DD
12
10
14 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
BSS225
700
680
300 V
660
640
8
620
120 V
480 V
6
600
580
4
560
540
2
520
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Q gate [nC]
500
-60
-20
20
60
100 140
T j [°C]
Rev. 1.21
page 7
2005-02-25
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