BT137 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
BT137 Datasheet PDF : 3 Pages
| |||
SEMICONDUCTORS
BT137 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VDRM
VRRM
IGT
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Gate trigger current
VGT
Gate trigger voltage
IL
Latching current
IH
Holding current
ID
Off-state leakage current
VT
On-state voltage
dVD/dt
Critical rate of rise of
off-state voltage
dVCOM/dt
tgt
Critical rate of rise of
change commutatating
current
Gate controlled turn-on
time
BT137-500 500 -
ID = 0.1 mA BT137-600 600 -
BT137-800 800 -
BT137-500 500 -
ID = 0.5 mA BT137-600 600 -
BT137-800 800 -
T2+ G+
-
-
VD = 12 V
T2+ G-
-
-
RL = 100 Ω
T2- G-
T2- G+
-
-
-
-
T2+ G+
-
-
VD = 12 V
T2+ G-
-
-
RL = 100 Ω
T2- G-
T2- G+
-
-
-
-
T2+ G+
-
-
VD = 12 V
T2+ G-
IGT = 100 mA T2- G-
-
-
-
-
T2- G+
-
-
IT = 200 mA, IGT = 50 mA
-
-
VD = VDRM max
Tj = 125°C
IT = 20 A
VDM = 67% VDRMmax
Tj = 125°C
Exponential waveform;
-
-
-
-
100 250
gate open circuit
VD = 400 V; Tj = 95 °C
dIcom/dt = 3.6 A/ms; IT = 8 A -
20
gate open circuit
ITM = 12 A; VD = VDRMmax
IG = 0.1 A; dIG/dt = 5 A/µs
-
2
-
-
-
-
V
-
-
10
10
10
mA
25
1.5
1.5
1.5
V
1.8
45
60
45
mA
60
50 mA
0.5 mA
1.6 V
- V/µs
- V/µs
- µs
26/09/2012
COMSET SEMICONDUCTORS
2|3
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