BU506DF View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BU506DF Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BU506F; BU506DF
handbook, h2alfpage
VCEsat
(V)
1
MGB886
1.2
handbook, halfpage
VBEsat
(V)
0.8
0.4
MGB901
(1)
(2)
(3)
0
10−2
10−1
1
IC (A) 10
IC/IB = 2; Tj = 25 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
0
0
1
Tj = 25 °C.
(1) IC = 3 A.
(2) IC = 2 A.
(3) IC = 1 A.
2
IB (A)
3
Fig.9 Base-emitter saturation voltage as a
function of base current; typical values.
102
handbook, halfpage
hFE
10
MGB877
1
10−2
10−1
1
IC (A) 10
handbook, halfpage
iC
ICsat
iB
ts
MBH382
90%
10%
time
tf
IB (end)
time
VCE = 5 V; Tj = 25 °C.
Fig.10 DC current gain; typical values.
1997 Aug 14
6
Fig.11 Switching time waveforms.
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