BUL510 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
BUL510 Datasheet PDF : 3 Pages
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Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
V(BR)EBO Emitter-base breakdwon voltage
VCEsat-1 Collector-emitter saturation voltage
VCEsat-2 Collector-emitter saturation voltage
VCEsat-3 Collector-emitter saturation voltage
VBEsat-1 Emitter-base saturation voltage
VBEsat-2 Emitter-base saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
Switching times inductive load
CONDITIONS
IC=100mA ;L=25mH
IE=10mA ;IC=0
IC=3A IB=0.6A
IC=4A IB=0.8A
IC=5A IB=1.25A
IC=3A IB=0.6A
IC=5A IB=1.25A
VCB=1000V IE=0
TC=125℃
VCE=450V IB=0
IC=1A ; VCE=5V
IC=10mA ; VCE=5V
ts
Storage time
tf
Fall time
IC=2.5A VCL=300V
IB1 =0.8A;IB2=-1.6A
L=200μH
www.jmnic.com
BUL510
MIN
TYP.
MAX UNIT
450
V
9
V
0.8
V
1.0
V
1.5
V
1.2
V
1.5
V
100
500
μA
250
μA
15
45
10
3.4
μs
0.15
μs
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