SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A; IB=1A
VCE=Rated VCES ;VBE=0
Tj=125
VEB=9V; IC=0
hFE-1
DC current gain
IC=10mA ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A; IB1=-IB2=1A
Product Specification
BUT12AX
MIN TYP. MAX UNIT
450
V
1.5
V
1.5
V
1.0
3.0
mA
10
mA
10
35
10
35
1.0
µs
4.0
µs
0.8
µs
2