BUW11AW View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BUW11AW Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW11W; BUW11AW
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT429 package.
APPLICATIONS
• Converters
• Inverters
• Switching regulators
• Motor control systems.
PINNING
PIN
DESCRIPTION
1
base
2
collector; connected to
mounting base
3
emitter
e
123
MBK117
2
1
MBB008
3
Fig.1 Simplified outline (SOT429) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCESM
collector-emitter peak voltage
BUW11W
BUW11AW
VCEO
collector-emitter voltage
BUW11W
BUW11AW
VCEsat
IC
ICM
Ptot
tf
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
CONDITIONS
VBE = 0
open base
see Figs 7 and 9
see Figs 2 and 4
see Fig 2
Tmb ≤ 25 °C; see Fig.3
resistive load; see Figs 11 and 12
MAX.
850
1 000
400
450
1.5
5
10
100
0.8
UNIT
V
V
V
V
V
A
A
W
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb thermal resistance from junction to mounting base
VALUE
1.25
UNIT
K/W
1997 Aug 14
1
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