BUZ70L View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ70L

SIPMOS® Power Transistor

Siemens AG 

BUZ 70 L

Avalanche energy EAS = ƒ(Tj)

parameter: ID = 12 A, VDD = 25 V

RGS = 25 Ω, L = 48.6 µH

6.5

mJ

5.5

EAS 5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

20 40 60 80 100 120 °C 160

Tj

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

Typ. gate charge

VGS = ƒ(QGate)

parameter: ID puls = 18 A

16

V

VGS

12

10

8

0,2 VDS max

0,8 VDS max

6

4

2

0

0

4

8

12 16 20 nC 26

QGate

71

V

68

V(BR)DSS

66

64

62

60

58

56

54

-60

-20

20

60

100 °C 160

Tj

Semiconductor Group

8

07/96

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